This document is a datasheet for the ASI AVF250, an NPN silicon RF power transistor designed with an Omnigoid Metalization System. It features a 400-2NL flag package style and includes input matching network capabilities.
The datasheet provides maximum ratings such as a collector-emitter voltage of 65V and a power dissipation of 250W at Tc = 25°C. Key electrical characteristics include breakdown voltages (BVceo, BVces, BVeso) and current gains (hFE) across various test conditions.
| Package Style | .400 2NL FLG |
|---|---|
| Transistor Type | NPN SILICON RF POWER TRANSISTOR |
| Collector-Emitter Voltage (BVceo) | 65 V |
| Power Dissipation (Pd) at Tc=25°C | 250 W |
| Operating Temperature Range | -65 °C to +200 °C |
The ASI AVF250 is an NPN silicon RF power transistor.
The maximum continuous drain current is 18.8 A.
The typical power dissipation is 625 W when the case temperature is 25°C.