The data sheet provides the characteristics of MLN1030S, including maximum current, maximum voltage, maximum power, etc.
The ASI MLN1030S is an NPN silicon RF power transistor designed with the Omnigold™ Metalization System. It features a .280 4L stud package style and is suitable for applications requiring specific voltage, current, and power handling capabilities.
Key electrical characteristics include a maximum collector-emitter breakdown voltage (Vceo) of 28 V and a typical power gain (Pg) of 9.0 dB at 1.0 GHz with a load resistance of 20 Ω.
| Collector Current (Ic) | 0.250 A |
|---|---|
| Collector-Emitter Breakdown Voltage (Vceo) | 28 V |
| Collector-Base Breakdown Voltage (Vcbo) | 3.5 V |
| Power Dissipation (Pd) @ 25°C | 7.0 W |
| Operating Temperature Range | -65 °C to +200 °C |
| Storage Temperature Range | -65 °C to +150 °C |
| Power Gain (Pg) @ 1.0 GHz, RL=20Ω | 9.0 dB |
The ASI MLN1030S is an NPN silicon RF power transistor.
The maximum continuous collector current (Ic) is 0.250 A.
The device operates from -65 °C to +200 °C.