The ASI MLN1030F is a NPN Silicon RF Power Transistor with Omnigold™ Metalization System, 500mA maximum current, 20V maximum collector-emitter voltage, 20OC/W thermal resistance
The ASI MLN1030F is an NPN silicon RF power transistor designed for use in radio frequency applications. It features the Omnigold™ Metalization System and is available in a .250 2L FLG package style.
The document lists maximum ratings including a collector current of 500 mA, a collector-emitter voltage of 20V, and an operating temperature range from -65 °C to +200 °C. Electrical characteristics such as gain (hfe) and power gain (Gp) are provided for specific test conditions.
| Collector Current (Ic) | 500 mA |
|---|---|
| Collector-Emitter Voltage (Vee) | 20V |
| Operating Temperature (Tt) | -65 °C to +200 °C |
| Package Style | .250 2L FLG |
The device has a maximum collector current rating of 500 mA.
The transistor operates from -65 °C to +200 °C.