The ASI HF125-28 is a NPN silicon RF power transistor designed for use in RF power amplifiers. It features a power gain of 15 dB at 100 W/30 MHz and an IMD3 of -30 dBc at 100 W(PEP).
The ASI HF125-28 is an NPN silicon RF power transistor designed for a .500 4L FLG package style. Key features include a minimum power gain of 15 dB at 100 W and 30 MHz, and the use of the Omnigold™ Metalization System.
The document provides maximum ratings such as a collector current of 20A and a power dissipation of 270 W at 25°C. It also lists specific electrical characteristics including breakdown voltages, current gains, and intermodulation distortion limits under various test conditions.
| Package Style | .500 4L FLG |
|---|---|
| Power Gain (Pg) | 15 dB min. at 100 W/30 MHz |
| Intermodulation Distortion (IMD) | -30 dBc max. at 100 W |
| Emitter-Base Voltage (Vebo) | 4.0 V |
| Power Dissipation (Poiss) | 270 W @ Tc = 25°C |
The ASI HF125-28 is designed for use as an NPN silicon RF power transistor.
The minimum power gain is 15 dB at 100 W and 30 MHz.
The maximum power dissipation is 270 W when the case temperature is 25 C.