ASI HF10-12S is a NPN silicon RF power transistor, featuring PG = 20 dB min. at 10 W/30 MHz, IMD3 = -30 dBc max. at 10 W(PEP), Omnigold™ Metalization System
The ASI HF10-12S is an NPN silicon RF power transistor designed for use in a .380 4L stud package. It utilizes the Omnigold™ Metalization System to ensure high performance.
| Package Style | .380 4L STUD |
|---|---|
| Collector-Emitter Voltage (Vceo) | 18 V |
| Intermodulation Distortion (IMD) | -30 dBc |
The minimum power gain is 20 dB at 10 W/30 MHz.
The maximum intermodulation distortion is -30 dBc at 10 W.