Key facts
- Brand
- ASI
- Model
- AVF300
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-06-11
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ASI AVF300 handbook(1)(1)
This document is a datasheet for the ASI AVF250, an NPN silicon RF power transistor designed with an Omnigoid Metalization System. It features a 400-2NL flag package style and includes input matching network capabilities.
The datasheet provides maximum ratings such as a collector-emitter voltage of 65V and a power dissipation of 250W at Tc = 25°C. Key electrical characteristics include breakdown voltages (BVceo, BVces, BVeso) and current gains (hFE) across various test conditions.
ASI AVF300 specifications
| Package Style | .400 2NL FLG |
|---|---|
| Transistor Type | NPN SILICON RF POWER TRANSISTOR |
| Collector-Emitter Voltage (BVceo) | 65 V |
| Power Dissipation (Pd) at Tc=25°C | 250 W |
| Operating Temperature Range | -65 °C to +200 °C |
Source: ASI AVF300 handbook(1)(1)
All ASI AVF300 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the ASI AVF250 designed for?
The ASI AVF250 is an NPN silicon RF power transistor.
What is the maximum continuous drain current rating?
The maximum continuous drain current is 18.8 A.
What is the ASI AVF250 designed for?
The ASI AVF250 is designed for use as an NPN silicon RF power transistor.
From: ASI AVF300 handbook(1)
What is the operating temperature range?
The device operates from -65°C to +250°C.
From: ASI AVF300 handbook(1)