The ASI HF100-28 is a class A silicon NPN planar transistor designed for SSB communications. It features high linear power output and low intermodulation distortion.
The ASI HF100-28 is a class A silicon NPN planar transistor designed for SSB communications. It features diffused ballasting for high VSWR capability and utilizes the Omnigold Metalization System. The device is rated for 28 V CE operation with a maximum power dissipation of 270 W at 25 °C.
| Power Dissipation | 270 W @ Tc = 25 °C |
|---|---|
| Operating Temperature | -65 °C to +200 °C |
| Storage Temperature | -65 °C to +150 °C |
| Thermal Resistance | 0.65 °C/W |
| Power Gain | 15 dB min. |
| Intermodulation Distortion | -30 dBc max. |
The device is rated for 28 V CE operation.
The maximum power dissipation is 270 W at a case temperature of 25 °C.
The minimum power gain is 15 dB.