The ASI HF220-28 is a silicon RF power transistor featuring 12 dB PG and -30 dBc IMD3.
The document is a technical datasheet for the Advanced Semiconductor Inc. HF220-28, an NPN silicon RF power transistor designed for high-frequency applications with low distortion characteristics. Key features include a minimum Power Gain (PG) of 12 dB at 220 W/30 MHz and a maximum third-order intermodulation product (IMD3) of -30 dBc.
| Collector-Base Voltage (VCBO) | 70 V |
|---|---|
| Collector-Emitter Voltage (VCEO) | 35 V |
| Power Dissipation (PDISS) | 320 W @ TC = 25 OC |
| Operating Temperature Range | -65 OC to +200 OC |
| Package Style | .500 4L FLG |
The minimum PG is 12 dB at 220 W/30 MHz.
The maximum IMD3 is -30 dBc at 220 W PEP.
It uses the Omnigold™ Metalization System.