ASI CBSL1 NPN Silicon RF Power Transistor Datasheet

The document describes the features and characteristics of the ASI CBSL1 model, which is designed for UHF Class A amplifier applications in cellular base station equipment.


ASI CBSL1 NPN Silicon RF Power Transistor Datasheet - cover page
Brand
ASI
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
1
File format
PDF
File size
13 KB
Published
11 June, 2012
Updated
28 September, 2023
MD5 checksum
048F1940DA439B24B277DCDA836D32E5

About this manual

The ASI CBSL1 is an NPN silicon RF power transistor specifically designed for use as a final stage device in UHF Class A amplifiers within cellular base station equipment. It features the Omnigold™ Metalization System and is packaged in a .280 4L stud style.

What's inside

  • Description
  • Features
  • Maximum Ratings
  • Order Code
  • Characteristics

Specifications

Package Style.280 4L STUD
Power Gain (Pg)10 dB min. @ 960 MHz
Output Power (Pigs)1.0 Watts min. at 960 MHz
Collector Current (Ic)0.25 A
Collector-Emitter Voltage (Vceo)28 V

Frequently asked questions

What is the minimum power gain of the ASI CBSL1?

The minimum power gain is 10 dB at 960 MHz.

What is the maximum output power rating for the CBSL1?

The device provides a minimum of 1.0 Watts at 960 MHz.

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