The ASI HF15-28S is a NPN Silicon RF Power Transistor produced by Advanced Semiconductor, Inc., it has the features of Omnigold™ Metalization System. Its maximum current is 4.0 A, the maximum collector-emitter reverse voltage is 65 V, the maximum emitter-base reverse voltage is 35 V, the maximum emitter-base voltage is 4.0 V and the maximum power dissipation is 40 W.
This document is a datasheet for the ASI HF15-28S, an NPN silicon RF power transistor. The device utilizes the Omnigold™ Metalization System and is packaged in a .380 4L Stud style.
The datasheet provides maximum ratings including a collector current of 4.0A and a collector-emitter voltage of 65V. It also lists key electrical characteristics such as transition frequency (fT) up to 250 MHz and power gain (Gp) of 10 dB at 150 MHz.
| Package Style | .380 4L STUD |
|---|---|
| Collector-Emitter Voltage | 65V |
| Collector-Base Voltage | 35 V |
| Emitter-Base Voltage | 40V |
| Power Dissipation | 40W @Tc = 25°C |
| Operating Temperature | -65 °C to +200 °C |
| Storage Temperature | -65 °C to +150 °C |
| Thermal Resistance | 4.4 °C/W |
| Power Gain | 10 dB |
The transistor is designed for RF power applications.
The maximum collector current is 4.0A and the maximum collector-emitter voltage is 65V.