The document describes the features and characteristics of ASI AVF400, including input matching network and Omnigold™ metalization system.
This document is a technical datasheet for the ASI AVF400, an NPN silicon RF power transistor packaged in a .400 2NL Flg style. It is designed with an Omnigold™ Metalization System and includes input matching network information.
The datasheet provides maximum ratings such as a power dissipation of 1000 W at Tc < 80°C and an operating temperature range from -65 °C to +250 °C. It also lists key electrical characteristics including breakdown voltages (BVceo, BVces, BVeso) and current gains under specific test conditions.
| Package Style | .400 2NL FLG |
|---|---|
| Power Dissipation (Tc < 80°C) | 1000 W |
| Operating Temperature Range | -65 °C to +250 °C |
| Storage Temperature Range | -65 'C to +200 |
| Thermal Resistance (RthJC) | 0.17 °C/W |
| Collector-Emitter Breakdown Voltage (BVceo) | 65 V |
| Collector-Base Breakdown Voltage (BVces) | 65 V |
| Emitter-Base Breakdown Voltage (BVeso) | 3.5 V |
The ASI AVF400 is an NPN silicon RF power transistor.
It can handle up to 400 W at a frequency between 1030 and 1090 MHz.
The device operates from -65 °C to +250 °C.