The ASI HF15-28F is a NPN Silicon RF Power Transistor with a minimum PG of 21 dB and a maximum IMD3 of -30 dBc. It features the Omnigold™ Metalization System and has maximum ratings of 4.0 A, 65 V, 35 V and 4.0 V.
This document is a technical datasheet for the ASI HF15-28F, an NPN silicon RF power transistor. The device features the Omnigold™ Metalization System and is designed with specific performance metrics including a minimum gain of 21 dB at 15 W/30 MHz and maximum IMD3 of -30 dBc.
The datasheet provides comprehensive electrical specifications, listing parameters such as collector-emitter breakdown voltage (65 V), power dissipation (40 W @ Tc = 25°C), and operating temperature ranges from -65 °C to +200 °C. It also includes a table of characteristics with test conditions for various symbols like BVceo, Iceo, and Cobo.
| Package Style | .380 4L FLG |
|---|---|
| Minimum Gain (Pg) | 21 dB min. at 15 W/30 MHz |
| Maximum IMD3 | -30 dBc max. at 15 W(PEP) |
| Collector-Emitter Breakdown Voltage (BVceo) | 65 V |
| Collector-Base Breakdown Voltage (BVcbo) | 35 V |
| Power Dissipation (Poiss) | 40 W @ Tc = 25°C |
| Operating Temperature Range (Ty) | -65 °C to +200 °C |
The ASI HF15-28F is an NPN silicon RF power transistor designed for use in RF applications.
The minimum gain is 21 dB at 15 W and 30 MHz.
The maximum IMD3 is -30 dBc at 15 W PEP.