The ASI HF30-28S is a NPN Silicon RF Power Transistor with the features of PG=20dB min. at 30W/30MHz and IMD3=-30dBc max. at 30W(PEP).
The document is a technical datasheet for the ASI HF30-28S, an NPN silicon RF power transistor designed with the Omnigold Metalization System. It specifies key performance metrics such as a minimum power gain of 65 dB at 175 MHz and a maximum output third-order intermodulation distortion (IMD3) of -30 dBc.
| Collector-Emitter Voltage (Vceo) | 65 V |
|---|---|
| Power Dissipation (Poiss) | 60 W @ Tj = 25°C |
| Operating Temperature Range (Ty) | -65 °C to +200 °C |
| Storage Temperature Range (Tste) | -65 °C to +150 °C |
| Thermal Resistance (8uc) | 2.9 °C/W |
| Package Style | .380 4L STUD |
The ASI HF30-28S is an NPN silicon RF power transistor.
The device has a maximum collector current of 5.0A and a maximum collector-emitter voltage of 65 V.
The maximum power dissipation is 60 W when the temperature is 25°C.