ASI10573 is an NPN Silicon RF Power Transistor from Advanced Semiconductor, with a maximum current of 19.8A, a maximum voltage of 55V and a maximum power dissipation of 720W. It is packaged in 2NL FLG.
This document is a datasheet for the ASI AVF350, an NPN silicon RF power transistor designed with an Omnigold™ Metalization System. It features a .400 2NL Flg package style and includes specific dimensions in inches and millimeters.
The datasheet provides maximum ratings such as a collector current of 19.8A and a power dissipation of 720W at a case temperature of 55°C. It also lists key electrical characteristics including breakdown voltages, gain-bandwidth product, and operating temperatures ranging from -65°C to +250°C.
| Package Style | .400 2NL FLG |
|---|---|
| Collector Current (Ic) | 19.8A |
| Collector-Emitter Voltage (Voc) | 55V |
| Power Dissipation (Poiss) | 720 W @ Tc = 55 °C |
| Operating Temperature Range (Tt) | -65 °C to +250 °C |
| Thermal Resistance (Rthjc) | 0.2 °C/w |
The maximum power dissipation is 720 W when the temperature is 55 °C.
The operating temperature range is from -65 °C to +250 °C.