The document describes the features and characteristics of the ASI AVF600 RF power transistor, including input matching network and Omnigold™ metallization system.
The ASI AVF600 is an NPN silicon RF power transistor designed with an Omnigold™ Metalization System. It features a 400-2L FLG package style and is intended for applications requiring specific high-frequency performance.
Key specifications include a maximum collector current (Ic) of 43 A and a maximum power dissipation (Po) of 1670 W at a case temperature below 100 °C. The device operates over a junction temperature range of -65 °C to +250 °C.
| Power Dissipation (Po) | 1670 W @ Tc < 100 °C |
|---|---|
| Junction Temperature Range (Tj) | -65 °C to +250 °C |
| Storage Temperature Range (Tstg) | -65 °C to +200 °C |
| Operating Frequency Range | 1030-1090 MHz |
The ASI AVF600 is an NPN silicon RF power transistor.
The maximum power dissipation is 1670 W when the case temperature is less than 100 °C.