The ASI HF75-28F is a NPN silicon RF power transistor featuring 18 dB gain and -30 dBc IMD3.
The ASI HF75-28F is an NPN Silicon RF Power Transistor designed for high-frequency applications. It features an Omnigold™ Metalization System and is characterized by a minimum power gain (PG) of 18 dB at 75 W/30 MHz and a maximum IMD3 of -30 dBc at 75 W (PEP).
| Collector-Emitter Breakdown Voltage | 35 V |
|---|---|
| Collector-Base Breakdown Voltage | 60 V |
| Emitter-Base Breakdown Voltage | 4.0 V |
| Collector-Base Voltage | 60 V |
| Collector-Emitter Voltage | 35 V |
| Power Dissipation | 140 W @ TC = 25 OC |
| Operating Junction Temperature | -65 OC to +200 OC |
| Storage Temperature | -65 OC to +150 OC |
| Thermal Resistance Junction-to-Case | 1.05 OC/W |
| Power Gain | 18 dB min. at 75 W/30 MHz |
| Intermodulation Distortion | -30 dBc max. at 75 W (PEP) |
| Input Capacitance | 80 pF |
The device has a maximum power dissipation rating of 140 W when the case temperature is 25 OC.
The transistor operates between a minimum of -65 OC and a maximum of +200 OC.