This data sheet is about ASI AVF250 NPN Silicon RF Power Transistor. The maximum rated current of this transistor is 18.8A, the maximum rated voltage is 55V, and the maximum power dissipation is 625W.
This document is a datasheet for the ASI AVF250, an NPN silicon RF power transistor. It is designed for applications requiring specific RF performance and includes details on the package style and input matching network.
The datasheet provides maximum ratings for voltage, current, and power, along with typical operating temperatures. It also lists key electrical characteristics such as breakdown voltages and gain figures at specific frequencies.
| Package Style | .400 2NL FLG |
|---|---|
| Storage Temperature Range | -65 °C to +200 °C |
| Collector-Emitter Breakdown Voltage | 65 V |
| Collector-Base Leakage Current | 25 mA |
| Collector Current | 1.0A |
| Power Gain | 8 dB |
The ASI AVF250 is designed for use as an NPN silicon RF power transistor.
The device operates from -65°C to +250°C.