This document describes the characteristics and features of the AVD350 model by Advanced Semiconductor, Inc. The AVD350 is an NPN silicon RF power transistor designed for input matching networks, featuring the Omnigold™ metallization system.
This document is a datasheet for the ASI AVD350, an NPN silicon RF power transistor packaged in a .400 2NL Flg style. It features an Omnigold™ Metalization System and includes specifications such as a maximum collector current of 19.8A.
| Package Style | .400 2NL FLG |
|---|---|
| Maximum Collector Current (Ic) | 19.8A |
| Power Dissipation (Pc) @ Tc = 25°C | 720 W |
| Operating Temperature Range | -65 °C to +250 °C |
| Storage Temperature Range (Tstg) | 65 C to +200 C |
| Thermal Resistance Junction-to-Case (RthJC) | 0.17 °C/W |
The maximum power dissipation is 720 W when the case temperature is 25°C.
The device operates from -65°C to +250°C.
The typical gain is 44 dB at a frequency of 900 MHz.