This datasheet provides detailed information on the ASI AVF100 NPN silicon RF power transistor, including maximum current, maximum voltage, maximum power, resistance, temperature range, etc.
The ASI AVF100 is an NPN silicon RF power transistor designed for operation in the 1030 to 1090 MHz frequency range. It features the Omnigold™ Metalization System and is packaged in a .250 2L Flg (B) style package.
The document lists maximum ratings including a collector current of 10A and a power dissipation of 140W at 25°C. Key electrical characteristics include a collector-emitter breakdown voltage of 60V and a typical gain of 10 dB at 100W output power.
| Package Style | .250 2L FLG (B) |
|---|---|
| Collector-Emitter Voltage | 60 V |
| Collector-Base Voltage | 35 V |
| Power Dissipation | 140 W @ To = 25°C |
| Operating Temperature | -65 °C to +200 °C |
| Storage Temperature | -65 °C to +150 °C |
| Operating Frequency | 1030 - 1090 MHz |
| Output Power | 100 W |
The ASI AVF100 is designed for use as an NPN silicon RF power transistor.
The maximum power dissipation is 140 W at 25°C.