This document is the technical parameter manual of ASI AVF150 NPN Silicon RF Power Transistor
This document is a datasheet for the ASI AVF150, an NPN silicon RF power transistor. It describes the device features, including the Omnigold™ Metalization System, and provides maximum ratings such as a collector current of 11A and a power dissipation of 400W.
| Collector-Emitter Voltage (Vee) | 55V |
|---|---|
| Power Dissipation (Poiss) | 400 W @ To = 25 °C |
| Operating Temperature (Tt) | -65 °C to +250 °C |
| Storage Temperature (Tste) | -65 °C to +200 °C |
| Collector-Base Breakdown Voltage (BVcso) | 65 V |
| Collector-Emitter Breakdown Voltage (BVcer) | 65 V |
| Collector-Base Leakage Current (Ices) | 12.5 mA |
| Gain (hire) | 15 to 120 |
| Power Gain (Po) | 8.5 dB |
It can dissipate up to 400 watts when the case temperature is 25 degrees Celsius.
The unit operates between -65 and +250 degrees Celsius, with a storage range of -65 to +200 degrees Celsius.