The AVD400 is a NPN silicon RF power transistor from ASI company, with a maximum current of 28A, a maximum voltage of 55V, a maximum power consumption of 1000W, and a working temperature range of -65℃ to +250℃.
The ASI AVD400 is an NPN silicon RF power transistor designed for applications requiring high power handling. It features the Omnigold™ Metalization System and is packaged in a .400 2L Flg (A) style package. The device is manufactured by Advanced Semiconductor, Inc.
Key specifications include a maximum power dissipation of 400 W at a case temperature below 80°C. The operating temperature range spans from -65°C to +250°C, with a storage temperature range of -65°C to +200°C. The typical power gain is 6.5 dB at 1025 MHz.
| Package Style | .400 2L FLG (A) |
|---|---|
| Maximum Power Dissipation | 400 W |
| Operating Temperature Range | -65 °C to +250 °C |
| Storage Temperature Range | -65 °C to +200 °C |
| Thermal Resistance | 0.12 °C/W |
| Collector-Emitter Breakdown Voltage | 65 V |
| Collector-Base Breakdown Voltage | 65 V |
| Emitter-Base Breakdown Voltage | 3.5 V |
| Collector Cutoff Current | 35 mA |
| Collector Current | 1.0 A |
| Power Gain | 6.5 dB |
| Frequency | 1025 MHz |
| Gain Bandwidth Product | 40 % |
The ASI AVD400 is an NPN silicon RF power transistor.
The device has a maximum power dissipation of 1000 W when the case temperature is below 80°C.
The device operates between -65 °C and +250 °C, with a storage range of -65 °C to +200 °C.