This datasheet lists the characteristics of AVD550, including reverse voltage, input matching network, output power, working temperature, etc.
The document is a technical datasheet for the Advanced Semiconductor (ASI) AVD550, an NPN silicon RF power transistor. It specifies that the device includes features such as an input matching network and Omnigold Metalization System.
Key specifications provided include a maximum collector current of 40 A, a maximum collector-emitter voltage of 55 V, and a maximum power dissipation of 1350 W at a case temperature of 80°C. The transistor operates within a frequency range of 1025 to 1150 MHz.
| Product Type | NPN Silicon RF Power Transistor |
|---|---|
| Collector Current (IC) | 40 A |
| Collector-Emitter Voltage (VCC) | 55 V |
| Power Dissipation (PDISS) | 1350 W @ TC ≤ 80°C |
| Operating Temperature Range (TJ) | -65°C to +250°C |
| Storage Temperature Range (TSTG) | -65°C to +200°C |
| Thermal Resistance Junction-to-Case (θJC) | 0.06 °C/W |
| Operating Frequency Range | 1025 - 1150 MHz |
The device includes an input matching network and uses an Omnigold Metalization System.
The maximum rated collector current (IC) for the AVD550 is 40 A.