This datasheet provides electrical specifications for the Toshiba 1SS319, a silicon epitaxial Schottky barrier diode. It includes maximum ratings such as reverse voltage (40V), forward current (300mA peak), and junction temperature (125°C). The device is packaged in a SC-61 case and features low forward voltage and reverse current. Graphs illustrate forward and reverse voltage characteristics under varying temperatures.
| Maximum Reverse Voltage | 45 V |
|---|---|
| Average Forward Current | 100 mA |
| Junction Temperature | 125 °C |
| Package Type | SC-61 |
| Weight | 0.013g |
The maximum forward current is 300 mA (peak).
The reverse current is 5 µA maximum at 40V.
The package type is SC-61.