This datasheet provides electrical specifications for the Toshiba 1SS3368 silicon epitaxial planar diode, including maximum ratings and typical performance curves. It details forward voltage, reverse current, capacitance, and temperature characteristics. The document also includes a warning about the inherent risks of using semiconductor devices in applications where failure could cause injury or property damage.
| Maximum Reverse Voltage | 85 V |
|---|---|
| Average Forward Current | 200 mA |
| Forward Voltage (100mA) | 0.78 V |
| Reverse Recovery Time | 7 to 20 ns |
| Total Capacitance | 7 pF |
| Junction Temperature | 150 °C |
The maximum reverse voltage rating is 85 V.
The forward voltage at 100mA is 0.78 V.
The reverse recovery time is 7 to 20 ns.
The junction temperature rating is 150 °C.