This datasheet provides electrical specifications for the Toshiba 1SS322, a silicon epitaxial Schottky barrier diode. It includes maximum ratings such as reverse voltage (40V), forward current (300mA), and power dissipation (100mW). The document also lists electrical characteristics like forward voltage and reverse current under specified test conditions. Graphs illustrate performance curves for forward and reverse voltage behavior.
| Reverse Voltage | 40 V |
|---|---|
| Maximum Forward Current | 300 mA |
| Average Forward Current | 100 mA |
| Power Dissipation | 100 mW |
| Junction Temperature | 125 °C |
| Reverse Current (40V) | 5 µA |
The maximum reverse voltage rating is 40 V.
The maximum forward current is 300 mA.