This document provides electrical specifications for the Toshiba 188337 silicon epitaxial planar diode, including maximum ratings and test conditions. It highlights features such as ultra-high-speed switching, low forward voltage, and fast reverse recovery time. The datasheet includes graphs for forward voltage, reverse voltage, and capacitance versus temperature, along with a reverse recovery time test circuit diagram.
| Maximum Reverse Voltage | 85 V |
|---|---|
| Average Forward Current | 200 mA |
| Forward Voltage (100mA) | 0.80 V |
| Reverse Recovery Time | 6 ns |
| Total Capacitance | 1.6 pF |
The maximum reverse voltage rating is 85 V.
The forward voltage at 100mA is 0.80 V.
The reverse recovery time is 6 ns.