This datasheet details the electrical characteristics and maximum ratings for Toshiba's 1SS321 Schottky barrier diode. It is designed for low voltage, high speed switching applications. Key specifications include a typical forward voltage of 0.42V, maximum reverse voltage of 12V, and junction temperature rating up to 125°C. The device is packaged in SC-59 (SOT-23MOD) and is suitable for use in circuits requiring fast switching and low forward voltage drop.
The datasheet includes electrical characteristics such as forward voltage, reverse current, and capacitance, along with graphical representations of voltage-current relationships. It also includes marking information and a disclaimer regarding product reliability and usage conditions.
| Maximum Reverse Voltage | 12 V |
|---|---|
| Reverse Voltage | 10 V |
| Maximum Forward Current | 150 mA |
| Average Forward Current | 50 mA |
| Power Dissipation | 150 mW |
| Junction Temperature | 125 °C |
| Forward Voltage (Typical) | 0.42 V |
| Reverse Current (Max) | 500 nA |
| Total Capacitance | 3.2–4.5 pF |
| Package Type | SC-59 (SOT-23MOD) |
The typical forward voltage is 0.42V at 10mA current.
The maximum reverse voltage rating is 12V.
The package type is SC-59 (SOT-23MOD).
The maximum junction temperature is 125°C.