This document provides electrical characteristics and maximum ratings for the Toshiba 1SS315 silicon epitaxial Schottky barrier diode. It includes parameters such as forward voltage, forward current, reverse current, and total capacitance under specified test conditions. The diode is designed for UHF band mixer applications.
The datasheet also includes graphical representations of forward current versus forward voltage and reverse current versus reverse voltage, with temperature and frequency dependencies noted.
| Maximum Reverse Voltage | 5 V |
|---|---|
| Forward Current | 30 mA |
| Junction Temperature | 125 °C |
| Forward Voltage | 0.25 V |
| Reverse Current | 25 nA |
| Total Capacitance | 0.6 pF |
The maximum reverse voltage rating is 5 V.
The forward voltage is 0.25 V.
The junction temperature rating is 125 °C.