This document is a datasheet for the Toshiba 1SS348, a silicon epitaxial Schottky barrier diode. It details electrical characteristics, maximum ratings, and application guidelines. The diode is designed for low forward voltage and high-speed switching applications. It includes graphs showing forward voltage vs. current and reverse voltage vs. capacitance, with specifications for operating and storage temperature ranges.
| Maximum Reverse Voltage | 85 V |
|---|---|
| Reverse Voltage | 80 V |
| Maximum Forward Current | 300 mA |
| Average Forward Current | 100 mA |
| Power Dissipation | 200 mW |
| Junction Temperature | 125 °C |
| Storage Temperature Range | -55~125 °C |
| Operating Temperature Range | -40~100 °C |
| Reverse Current (80V) | 5 µA |
| Total Capacitance (1MHz) | 45–100 pF |
The maximum reverse voltage rating is 85 V.
The reverse current at 80V is 5 µA.
The operating temperature range is -40 to 100 °C.