This document is a technical datasheet for the Toshiba 1SS349, a silicon epitaxial Schottky barrier type diode designed for low voltage and high-speed switching applications. The device features a small SC-59 package and operates within specific temperature ranges.
The datasheet provides detailed maximum ratings, including a peak reverse voltage of 25V and an average forward current of 1000mA. It also lists key electrical characteristics such as typical forward voltage drop at various currents and maximum reverse leakage current.
| Maximum (Peak) Reverse Voltage | 25 V |
|---|---|
| Reverse Voltage | 20 V |
| Maximum (Peak) Forward Current | 3000 mA |
| Average Forward Current | 1000 mA |
| Power Dissipation | 200 mW |
| Junction Temperature | 125 °C |
| Operating Temperature Range | -40~100 °C |
| Forward Voltage (Typical) | 0.49 V @ 1000mA |
| Reverse Current (Max) | 50 uA @ 20V |
The maximum peak reverse voltage (VRM) is rated at 25 V.
The total capacitance (Cr) has a maximum rating of 250 pF.