This document describes the features of the TPCS8208 field effect transistor in lithium-ion battery applications. It has a small footprint and thin package, low drain-source ON resistance, high forward transfer admittance, low leakage current, and enhancement mode. Additionally, the document lists the maximum ratings of the TPCS8208.
This document is a technical datasheet for the Toshiba TPCS8208H, an enhancement-mode N-channel MOS transistor (U-MOSIII) optimized for lithium-ion battery applications. The device features a small footprint and low drain-source ON resistance.
The datasheet provides maximum ratings, electrical characteristics, thermal data, and circuit configuration details. It includes specific performance metrics such as gate threshold voltage, forward transfer admittance, and switching times under various test conditions.
| Drain-source voltage (VDS) | 20 V |
|---|---|
| Gate threshold voltage (Vth) | 0.5~1.2 V |
| Drain-source ON resistance (RDS(ON)) | 13 mΩ (typ.) |
| Forward transfer admittance (|Yfs|) | 15 S (typ.) |
| Leakage current (Ipgs) | 10 pA (max) |
| Channel temperature (Tch) | 150 °C |
The typical drain-source ON resistance is 13 mΩ.
The maximum rating for gate-source voltage is +12 V.