This document is a technical datasheet for the Toshiba 1SV162, a silicon epitaxial planar type variable capacitance diode. It is specifically designed for use in TV tuner VHF band electronic tuning applications.
The datasheet lists key features including a high capacitance ratio (minimum 5.0) and low series resistance (maximum 0.5 ohms). It provides maximum ratings such as a reverse voltage of 28V, peak reverse voltage of 30V, and a junction temperature limit of 125°C.
| Reverse Voltage (VR) | 28 V |
|---|---|
| Peak Reverse Voltage (VRM) | 30 V |
| Junction Temperature (Tj) | 125 °C |
| Storage Temperature Range (Tstg) | -55~125 °C |
| Capacitance Ratio (C3v/C25V) | Min. 5.0 |
| Series Resistance (rs) | Max. 0.5 Ω |
| Reverse Current (Ir) at VR=28V | Max. 50 nA |
| Capacitance (Cav) at Vr=3V, f=1MHz | 26 ~ 32 pF |
| Capacitance (c25V) at Vr=25V, f=1MHz | 4.5 - 6.6 pF |
It is designed for TV tuner VHF band electronic tuning applications.
Yes, it is available in a matched group for Cv — VR capacitance to 3.0%.