This document is a technical datasheet for the Toshiba 1SV100, a silicon epitaxial planar type variable capacitance diode. It is specifically designed for AM radio band tuning applications and features high capacitance ratio and low voltage operation.
The datasheet provides maximum ratings including reverse voltage up to 15V and junction temperature up to 125°C. It details electrical characteristics such as reverse current, capacitance values at various voltages (Cty, C3y, C5v), and the figure of merit Q. Additionally, it includes a table for matched group capacitance data and graphs illustrating capacitance versus voltage and ambient temperature.
| Reverse Voltage (VR) | 15 V |
|---|---|
| Junction Temperature (Tj) | 125 °C |
| Storage Temperature Range (Tstg) | -55 ~ 125 °C |
| Capacitance Ratio (Cty/Cgy) | 17 (Min.) |
| Figure of Merit Q | 450 (Typ.) |
The minimum capacitance ratio (Cty/Cgy) is 17.
The typical Figure of Merit Q is 450.