This document is a technical datasheet for the Toshiba 1SV229, a silicon epitaxial planar type variable capacitance diode designed for UHF band radio applications. The device features an ultra-low series resistance of approximately 0.20 ohms (typical), making it suitable for small-sized sets.
The datasheet provides maximum ratings including a reverse voltage of 15V and a junction temperature of 125°C. It also lists specific electrical characteristics such as capacitance values at various voltages, capacitance ratios, and series resistance measurements.
| Reverse Voltage (VR) | 15 V |
|---|---|
| Junction Temperature (Tj) | 125 °C |
| Storage Temperature Range (Tstg) | -55~125 °C |
| Series Resistance (rg) | 0.20 ohm (Typ.) |
| Capacitance at 2V (Coy) | 14 to 16 pF |
| Capacitance at 10V (Ciov) | 5.5 to 6.5 pF |
| Weight | 0.004g |
The device has a maximum reverse voltage rating of 15 V.
The maximum rated junction temperature is 125 °C.