This document introduces the features and characteristics of the TOSHIBA Field Effect Transistor TPCS8209, which is suitable for lithium-ion battery applications, notebook PC applications, and portable machines and tools. The transistor has features such as small footprint, low drain-source ON resistance, high forward transfer admittance, low leakage current, and enhancement mode.
This document is a technical datasheet for the TOSHIBA TPCS8209, an enhancement-mode silicon N-channel MOS type field effect transistor (U-MOSIII). The device is specifically optimized for low drain-source ON resistance and high forward transfer admittance, making it suitable for applications such as lithium-ion battery management systems and notebook PCs.
| Drain-source voltage (Vdss) | 20 V |
|---|---|
| Gate threshold voltage (Vth) | 0.5~1.2 V |
| Drain-source ON resistance (Rds(ON)) | 19 mΩ (typ.) |
| Forward transfer admittance (|Yf|) | 9.2 S (typ.) |
| Leakage current (Ipgg) | 10 pA (max) |
The maximum channel temperature (Tech) rating is 150°C.
The TPCS8209 is designed for lithium ion battery, notebook PC, and portable machine or tool applications.
A single device can dissipate 1.4 W of drain power during continuous operation.