This document is a technical datasheet for the Toshiba TPCS8210, an enhancement-mode silicon N-channel MOSFET (U-MOSIH). The device features a small footprint and low drain-source ON resistance, making it suitable for lithium-ion battery applications. It operates with a maximum drain-source voltage of 20V and includes specific ratings for single-device and dual operation modes.
| Drain-source voltage (Vpss) | 20 V |
|---|---|
| Gate threshold voltage (Vth) | 0.5~1.2 V |
| Drain-source ON resistance (RDS(ON)) | 19 mQ (typ.) |
| Forward transfer admittance (|Yfs|) | 9.2 S (typ.) |
| Leakage current (Ipss) | 10 uA (max) |
The maximum drain-source voltage rating is 20 V, and the maximum gate-source voltage rating is +12 V.
The typical drain-source ON resistance (RDS(ON)) is 19 mQ.
The channel temperature should not exceed 150 °C.