This document is a technical datasheet for the Toshiba 1SV17248, an 18V172 model Silicon Epitaxial PIN Type diode. The device is designed specifically for use in VHF and UHF band RF attenuators.
The datasheet provides maximum ratings including a reverse voltage of 50V and a forward current of 50mA, with a junction temperature limit of 125°C. It also lists electrical characteristics such as reverse current (max 0.1 µA) and total capacitance (typical 0.25 pF).
| Reverse Voltage VR | 50 V |
|---|---|
| Forward Current Ip | 50 mA |
| Junction Temperature Tj | 125 °C |
| Storage Temperature Range Tstg | -55~125 °C |
| Reverse Current IR (max) | 0.1 µA |
| Forward Voltage VF (typ) | 0.95 V |
| Total Capacitance Cj (typ) | 0.25 pF |
The device has a maximum reverse voltage rating of 50 V.
The maximum rated forward current for the diode is 50 mA.