This document is a technical datasheet for the Toshiba 1SV214, a silicon epitaxial planar type variable capacitance diode designed for TV tuning applications. The device features a high capacitance ratio of approximately 6.5 (C2V/C25V) and low series resistance.
| Reverse Voltage (VR) | 30 V |
|---|---|
| Peak Reverse Voltage (VRM) | (RL = 10k) Vv |
| Junction Temperature (Tj) | 125 °C |
| Storage Temperature Range (Tstg) | -55~125 °C |
| Capacitance at 2V (Cc2v) | 14.16 pF to 16.25 pF |
| Capacitance at 25V (C25V) | 21 pF to 24.8 pF |
| Capacitance Ratio (C2V /C25V) | 5.90 to 7.15 |
| Series Resistance (rg) | 0.4 to 0.55 Ohm |
The maximum reverse voltage rating is 30 V.
The typical capacitance ratio C2V/C25V is 6.5.
The maximum junction temperature is 125 °C.