TPCS8211 is a Toshiba field-effect transistor suitable for lithium-ion battery applications, notebook PC applications, and portable machines and tools. It features a small and thin package, low drain-source ON resistance, high forward transfer admittance, and low leakage current.
This document is a technical datasheet for the TOSHIBA TPCS8211, an N-channel enhancement-mode Field Effect Transistor (MOS Type U-MOSIII). The device features a small footprint package with low drain-source ON resistance of 16 mΩ typical and high forward transfer admittance. It is specifically noted for applications in lithium-ion batteries, notebook PCs, and portable machines.
The datasheet provides detailed electrical characteristics including gate leakage current, breakdown voltages, threshold voltage, and capacitance values at 25°C. It also includes thermal resistance data, safe operating area curves, switching times, and restrictions on product use regarding safety and intended applications.
| Package Type | Small and thin package |
|---|---|
| Drain-source ON resistance (typ.) | 16 mΩ |
| Forward transfer admittance (typ.) | 11 S |
| Leakage current (max) | 10 pA |
| Gate threshold voltage range | 0.5~1.2 V |
| Drain-source breakdown voltage (max) | 20 V |
| Gate threshold voltage (typ.) | 1.2 V |
| Drain-source ON resistance (typ.) @ 4.8A | 16 mΩ |
| Input capacitance (max) | 1590 pF |
The device is intended for lithium-ion battery applications, notebook PCs, and portable machines and tools.
The maximum drain-source voltage rating is 20 V.