This document is a technical datasheet for the TOSHIBA 1SV215, a silicon epitaxial planar type variable capacitance diode. It is designed for applications such as CATV tuning due to its high capacitance ratio and low series resistance.
The datasheet provides maximum ratings including a reverse voltage of 30 V and a junction temperature of 125 °C. Electrical characteristics specify parameters like reverse current, capacitance at various voltages (Co and C0s), capacitance ratio, and series resistance under specific test conditions.
| Reverse Voltage (VR) | 30 V |
|---|---|
| Peak Reverse Voltage (VRM) | (RL =10k) |
| Junction Temperature (Tj) | 125 °C |
| Storage Temperature Range (Tstg) | -55~125 °C |
| Capacitance Co (VR=2V, f=1MHz) | 26 - 82 pF |
| Capacitance C0s (VR=25V, f=1MHz) | 2.5 - 3.2 pF |
| Series Resistance (rg) | 0.6 - 0.8 ohm |
The maximum reverse voltage rating is 30 V.
The typical capacitance ratio is 10.5.
The maximum junction temperature is 125 °C.