The TPC8401 is a MOSFET produced by Toshiba. It features low leakage current, high on-resistance and high gain. It is suitable for lithium ion batteries in portable devices such as notebooks.
This document is a technical datasheet for the Toshiba TPC8401, an enhancement-mode Field Effect Transistor (FET) available in both P-Channel and N-Channel configurations. The device features low drain-source ON resistance and high forward transfer admittance, making it suitable for applications such as lithium-ion secondary battery systems and portable equipment.
| Drain-source ON resistance (Typical) P-Channel | 27 mΩ |
|---|---|
| Drain-source ON resistance (Typical) N-Channel | 14 mΩ |
| Forward transfer admittance (Typical) P-Channel | 7 S |
| Gate threshold voltage range P-Channel | -0.8 ~ -2.0 V |
| Drain-source breakdown voltage | ±30 V |
| Channel temperature (Max) | 150 °C |
The maximum channel temperature rating is 150°C.
A single device can dissipate up to 15 W of power in single-device operation.
The typical drain-source ON resistance for the N Channel is 14 mQ.