This document describes the features and characteristics of TPC8403, a TOSHIBA field effect transistor, including low drain-source ON resistance, high forward transfer admittance, low leakage current, and enhancement mode. It is suitable for motor drive applications, notebook PC applications, and portable equipment applications.
The document is a technical datasheet for the Toshiba TPC8403, an enhancement mode silicon field effect transistor available in both P-channel (U-MOSII) and N-channel (U-MOSII) configurations. It is specifically designed for motor drive and notebook PC/portable equipment applications.
Key electrical characteristics include low drain-source ON resistance with typical values of 45 mΩ for the P-channel and 25 mΩ for the N-channel, along with high forward transfer admittance. The device operates within a channel temperature range of -55°C to 150°C.
| Drain-source ON resistance (Typ.) P-Channel | 45 mΩ |
|---|---|
| Drain-source ON resistance (Typ.) N-Channel | 25 mΩ |
| Forward transfer admittance (Typ.) P-Channel | 6.25 S |
| Forward transfer admittance (Typ.) N-Channel | 7.8 S |
| Gate threshold voltage P-Channel | -1.0 ~ -2.2 V |
| Gate threshold voltage N-Channel | 1.3 ~ 2.5 V |
| Maximum channel temperature | 150 °C |
The device is designed for motor drive, notebook PC, and portable equipment applications.
The typical leakage current (Ipgg) for the P-channel is -10 pA at Vps = -380 V.
The typical leakage current (Ipgg) for the N-channel is 10 A at Vps = 30 V.