TPC8211 is a N-channel MOSFET produced by Toshiba. It is mainly used in lithium batteries, portable devices, notebook computers and other fields. Its main features are low on-resistance, high transfer gain, and low leakage current, making it an ideal choice for power management circuits.
This document is a technical datasheet for the Toshiba TPC8211, an N-channel enhancement-mode Field Effect Transistor (MOS Type U-MOS III). It specifies applications including lithium-ion battery and portable equipment use. The text provides maximum ratings such as a drain-source voltage of 30V and a continuous drain current of 5.5A.
| Drain-source voltage (Vdss) | 30 V |
|---|---|
| Continuous drain current (Id) | 5.5 A |
| Gate threshold voltage (Vth) | 1.3 to 2.5 V |
| Drain-source ON resistance (Rds(ON)) | 25 mQ (typ.) |
| Forward transfer admittance (|Yfs|) | 7.0 S (typ.) |
The device is designed for lithium ion battery applications, portable equipment applications, and notebook PC applications.
The maximum drain-source voltage rating is 30 V.
The typical weight of the device is 0.08 g.