TPC8301 is a P-channel MOSFET produced by Toshiba. It is mainly used in lithium-ion batteries, portable devices and notebook computers. The product has the characteristics of small size, low RDS(ON), high Yfs and low IDSS.
This document is a technical datasheet for the Toshiba TPC8301 Field Effect Transistor. It describes a Silicon P Channel MOS Type device specifically designed for Lithium Ion Battery Applications and Portable Equipment Applications, such as Notebook PCs.
The datasheet provides comprehensive electrical characteristics including maximum ratings, thermal resistance values, and switching times. Key specifications highlight a low drain-source ON resistance of 95 mΩ typical and a small footprint due to the SOT-23 package.
| Drain-source voltage (Vdss) | -30 V |
|---|---|
| Gate threshold voltage (Vth) | -0.8 ~ -2.0 V |
| Drain-source ON resistance (Rds(on)) | 95 mΩ typ. |
| Forward transfer admittance (Yfs) | 4S typ. |
| Channel temperature (Tch) | 150 °C |
This device is intended for Lithium Ion Battery Applications and Portable Equipment Applications, such as Notebook PCs.
The typical drain-source ON resistance (Rds(on)) is 95 mΩ.
No, the product is not intended or warranted for usage in equipment that requires extraordinarily high quality and reliability where failure may cause loss of human life.