TPC8303 is a P-channel MOSFET produced by Toshiba. It features low on-resistance, high output impedance and low leakage current.
This document is a technical datasheet for the Toshiba TPC8303, an enhancement-mode Silicon P-Channel MOS Type (U-MOSII) field effect transistor. The device is specifically optimized for Lithium Ion Battery Applications and Portable Equipment Applications, such as Notebook PCs.
Key electrical characteristics include a maximum drain-source breakdown voltage of -30V, a typical forward transfer admittance of 7 S, and a low leakage current of 10 pA (max). The transistor features a typical drain-source ON resistance of 27 mΩ at Vgs = -4V. It is designed for single or dual operation with specific thermal resistance ratings depending on the mounting board type.
| Product Type | Silicon P Channel MOS Type (U-MOSII) |
|---|---|
| Drain-source voltage | -30 V |
| Gate threshold voltage | -0.8 ~ -2.0 V |
| Drain-source ON resistance (typ) | 27 mΩ |
| Forward transfer admittance (typ) | 7 S |
| Leakage current (max) | -10 pA |
The maximum rating for drain-source voltage is -30 V, and the maximum rating for gate-source voltage is +20 V.
The typical value for low drain-source ON resistance (Rds(ON)) is 27 mΩ.
This transistor is intended for use in lithium ion battery and portable equipment applications, such as notebook PCs.