TPC8402 is a N, P channel MOS type field effect transistor produced by Toshiba Corporation. It is used in lithium ion secondary batteries, notebooks and portable equipment. Its features are low on-resistance, high transfer gain and low leakage current.
This document is a technical datasheet for the Toshiba TPC8402 Field Effect Transistor, available in both Silicon N-Channel and P-Channel configurations. The device is specifically optimized for Lithium Ion Secondary Battery Applications, Notebook PCs, and Portable Equipment.
Key electrical characteristics include low drain-source ON resistance (typical 37 mΩ for N-channel and 27 mQ for P-channel) and high forward transfer admittance. The datasheet provides comprehensive data on maximum ratings, thermal characteristics, electrical parameters, capacitance curves, safe operating areas, and switching times.
| Drain-source ON resistance (Typical) P-channel | 27 mΩ |
|---|---|
| Drain-source ON resistance (Typical) N-channel | 37 mΩ |
| Forward transfer admittance (Typical) P-channel | 7 S |
| Gate threshold voltage range P-channel | -0.8 ~ -2.0 V |
| Drain-source breakdown voltage (Max) | 30 V |
| Channel temperature rating (Max) | 150 °C |
| Storage temperature range | -55 ~ 150 °C |
The device is designed for Lithium Ion Secondary Battery Applications, Notebook PCs, and Portable Equipment.
Yes, it is specified as an Enhancement—mode transistor.