TPC8302 is a P-channel MOS type field-effect transistor produced by Toshiba. It is mainly used in lithium-ion batteries, portable devices and notebook computers. Its characteristics are 2.5V gate drive voltage, small footprint, low on-resistance, low leakage current and fast switching speed.
The document is a technical specification sheet for the Toshiba TPC8302, an electrostatic-sensitive silicon P-channel Field Effect Transistor. It details applications such as lithium-ion battery management and portable equipment, highlighting features like low drain-source ON resistance and small footprint packaging.
Key specifications include a maximum drain-source voltage of -20V, a gate threshold voltage range of -0.5 to -1.1V, and a typical forward transfer admittance of 5 S. The datasheet also provides thermal characteristics for single and dual device operations on glass-epoxy boards.
| Drain-source ON resistance (Rds(on)) | 100 mQ typ. |
|---|---|
| Forward transfer admittance (|Yfs|) | 5 S |
| Leakage current (Ipgg) | -10 pA max |
| Channel temperature (Tch) | 150 °C |
The TPC8302 is intended for lithium-ion battery applications, portable equipment, and notebook PCs.
No, it is not warranted for usage in equipment where failure may cause loss of human life or bodily injury.