TPC8105-H is a P-channel MOS type field effect transistor produced by Toshiba. This transistor has the characteristics of small size, high speed switching, small gate charge, low leakage current, low on-resistance, high forward transfer admittance, etc., and is suitable for applications such as notebook computers and portable equipment.
This document is a technical datasheet for the Toshiba TPC8105-H, a Silicon P-Channel High Speed U-MOSII Field Effect Transistor. The device is specifically optimized for use in High Speed and High Efficiency DC-DC Converters and Lithium Ion Battery Applications, such as those found in notebook PCs and portable equipment.
| Gate threshold voltage (Vth) | -0.8 ~-2.0 V |
|---|---|
| Drain-source ON resistance (RDS(ON)) | 20 mQ (typ.) |
| Total gate charge (Qg) | 32 nC (typ.) |
The typical small gate charge (Qg) is 32 nC.