The TPC8005-H is a high-performance N-channel MOS switch manufactured by Toshiba Semiconductor. It has small footprint, high speed, low power consumption, and is suitable for portable devices, notebook computers and other applications.
This document is a technical datasheet for the Toshiba TPC8005-H, an enhancement-mode silicon N-channel MOS type field effect transistor. It features high speed switching with approximately 60% speed up compared to current types and low drain-source ON resistance of 13 mΩ typical.
The device is optimized for applications including lithium-ion battery systems, portable equipment, and notebook PCs. Key specifications include a maximum drain-source voltage of 30 V, a continuous drain current of 1 A (DC), and a total gate charge of 20 nC typical.
| Package Type | Small footprint due to small and thin package |
|---|---|
| Drain-source voltage (Vdss) | 30 V |
| Continuous Drain Current (Ip) | 1 A |
| Drain-source ON resistance (Rds(ON)) | 13 mΩ typ. |
| Total Gate Charge (Qg) | 20 nC typ. |
| Channel Temperature (Tch) Max | 150 °C |
The device has a maximum drain-source voltage of 30 V and a maximum gate-source voltage of +20 V.
The typical total gate charge, including both gate-source and gate-drain components, is 20 nC.