This document provides information about the supplier of TPC8006-H. It describes the features and characteristics of the product.
This document is a technical datasheet for the Toshiba TPC8006-H, an enhancement-mode silicon N-channel MOS type field effect transistor. It is designed for high-speed and high-efficiency DC-DC converter applications in lithium-ion battery systems, notebook PCs, and portable equipment.
The datasheet provides maximum ratings, electrical characteristics, thermal properties, and graphical curves illustrating performance under various conditions such as temperature and voltage.
| Gate Threshold Voltage (Vth) | 1.83~2.5V |
|---|---|
| Drain-Source ON Resistance (RDS(ON)) | 19mΩ (Typ.) |
| Gate Charge (Qg) | 16nC (Typ.) |
The maximum continuous drain current is rated at 7 A.
The drain power dissipation is 2.4 W when the ambient temperature is 25°C.
The device should be mounted on a glass epoxy board measuring 1 inch by 0.8 inches.